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| CMPD4150 HIGH CURRENT HIGH SPEED SWITCHING DIODE Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMPD4150 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed switching applications. Marking code is ABA. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) SYMBOL VR VRRM IF IFRM IFSM IFSM PD TJ,Tstg JA UNITS V V mA mA mA mA mW oC oC/W Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 sec. Forward Surge Current, tp=1 sec. Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 50 50 250 250 4000 1000 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL IR VF VF VF VF VF CT trr TEST CONDITIONS VR=50V IF=1.0mA IF=10mA IF=50mA IF=100mA IF=200mA VR=0, f=1 MHz IR=IF=10mA, RL=100, Rec. to 1.0mA MIN 0.54 0.66 0.76 0.82 0.87 MAX 100 0.62 0.74 0.86 0.92 1.0 4.0 4.0 UNITS nA V V V V V pF ns 136 All dimensions in inches (mm). NO CONNECTION A C R2 137 |
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